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Your search returned 29 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 1999 Volume number : 46 Issue: 01 |
A Monolithically Integrated Three-Axis Accelerometer Using Cmos Compatible Stress-Sensitive Differential Amplifiers
(Article)
Subject:
Acceleration Measurement
,
Cmos Integrated Circuits
,
Differential Amplifiers
Author:
H
Takaori
Y
Matsumoto
M
Ishida
page:
109
-
116
A Newleakage Mechanism Of Co Salicide And Optimzed Process Conditions
(Article)
Subject:
New Landfill Look
,
Optimized Control Method
,
Process
Author:
Ken-Ichi
Goto
Junji
Watanabe
Takae
Sukegawa
page:
117
-
124
A New And Flexible Scheme For Hot-Electron Programming Of Nonvolatile Memory Cells
(Article)
Subject:
Current Absorption
,
Flash Eeprom
,
Hot Electron
Author:
David
Esseni
Paolo
Cappelletti
Bruno
Ricco
page:
125
-
133
Observation Of"Capactiance Overshoot" In The Transient Currednt Measurement Of Polysilicon Tft'S
(Article)
Subject:
Capacitance Measurement
,
Current Measurement
,
Transient Analysis
Author:
S. W. B.
Tam
O. K. B.
Lui
M. J.
Quinn
page:
134
-
144
Junction Leakage Characteristics In Modified Locos Isolation Structures With A Nitride Spacer
(Article)
Subject:
Mos Devices
,
Silicon Materials/Evices
Author:
Se-Aug
Jang
In-Seok
Yeo
Young-Bog
Kim
page:
145
-
150
Substrate-Bias Effect And Source Drain Breakdown Characterisics In Body-Tied Short Channel Soi Modfet'S
(Article)
Subject:
Substrate
,
Effect
,
Source
,
Mosfets
Author:
Shigenobu
Maeda
Y
Yamaguchi
Yasuo
Iwamaguchi
page:
151
-
158
A New Soft Breakdown Model For Thin Thermal Sio2 Films Under Constant Current Stress
(Article)
Subject:
Dielectric Breakdown
,
Gate Oxide
,
Mosfet
Author:
T.
Tomita
T
Sakurai
Kenji
Taniguchi
page:
159
-
164
A Physical-Based Analytical Tun-On Model Of Polysilicon Thin-Film Transistors For Circuit Simulation
(Article)
Subject:
Kink-Effect
,
Turn On Model
,
Polysilicon Thin Film Transistors
Author:
G
Yang
Sungwoo
Hur
Chul-Hi
Han
page:
165
-
172
A 63-170 Ghz Second-Harmonic Operation Of An Inp Transferred Electron Device
(Article)
Subject:
Inp Gunn Dioes
,
Second-Harmonic Oscillators
,
Transferred Electron Device
Author:
Stephen H.
Jones
Tim M.
O'Brien
Michael F.
Zybura
page:
17
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23
Nonlinear Device Noise Models Satisfying The Thermodynamic Requirements
(Article)
Subject:
Nonlinear
,
Noise Model
,
Requirment
Author:
J. L
Wyatt
G. J
Coram
page:
184
-
193
The Noise Of Inp Based 2degdevices And Its Dependence On Mobility
(Article)
Subject:
Devices
,
Dependence
,
Mobility
Author:
Jurgen
Berntgen
Klaus
Heime
Franz-Losef
Tegude
page:
194
-
203
Constant-Resistance Deep-Level Transient Spectroscopy In Si And Ge Jfets'S
(Article)
Subject:
Constant - Pressure Test
,
Transient
,
Jfet
Author:
Plamen V.
Kolev
James
Kierstead
Mauro
Citterio
page:
204
-
213
Surface-States Effects On Gaas Fet Electrical Performance
(Article)
Subject:
Charge Carrier Processes
,
Fet'S
,
Interface Phenomena
,
Semiconductors
Author:
Y.
Ohno
Prancis
Francis
Masanobu
Nogome
page:
214
-
219
Field And Temperature Acceleration Model For Time-Dependent Dielectric Breakdown
(Article)
Subject:
Mos Capacitors
,
Oxide Breakdown
,
Oxide Gas
Author:
Mikihiro
Kimura
page:
220
-
229
Analysis Of The Spurious Negative Resistance Of Pn Junction Avalanche Breakdown
(Article)
Subject:
Ionization
,
Silicon Devices
,
Simulation
Author:
Sung Joon
Hong
Young June
Park
H
Min
page:
230
-
236
Oscillation Effects In Igbt''S Related To Negative Capacitance Phenomena
(Article)
Subject:
Insulated Gate Bipolar Transistors
,
Oscillation
Author:
Ichiro
Omura
Wolfgang
Fichtner
F.
Ohashi
page:
237
-
244
Enhanacement Of High-Temperature High-Frequency Performance Of Gaas-Based Fet'S By The High-Temperature Electronic Technique
(Article)
Subject:
Fet'S
,
Hemts
,
High-Temperature Efects
Author:
R
Narasimhan
L. P.
Sadwick
Ruey J.
Hwu
page:
24
-
31
2.5 Kv-1000 A Power Pack Igbt (High Power Flat-Packaged Npt Type Rc- Igbt)
(Article)
Subject:
Power Packaging
,
Flat-Plate
Author:
Yoshikazu
Takahashi
K.
Yoshikawa
T.
Fujii
page:
245
-
250
A Modified Lucky Electron Model For Impact Ionization Rate In Nmosfet'S At 77 K
(Article)
Subject:
Impact Ionization
,
Low Temperature
,
Mosfets
,
Nonstationarity
Author:
C. H.
Ling
Lin Ming
See
page:
263
-
266
A Triple Channel Hemt On Inp (Camel Hemt) For Large-Signal High-Speed Applications
(Article)
Subject:
Triple Flame
,
Channel Flow
,
Application
Author:
Jean
Decobert
Hassan
Maher
Aline
Falcou
Andre
Scavennec
page:
32
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37
Hgh- Performance Gaas Mesfet'S With Advanced Ldd Structure For Digital, Analog, And Microwave Applications
(Article)
Subject:
Gaas
,
High-Speed Integrated Circuits
,
Mesfet
Author:
Shigeru
Nakajima
Masaki
Yanagisawa
Eiji
Tsumura
page:
38
-
47
The Effect Of Gate Recess Profile On Device Performance Of Ga Doped-Channel Fet'S
(Article)
Subject:
Breakdown Voltage
,
Doped-Channel Fet
,
Gate Resistance
Author:
Shey-Shi
Lu
Chin-Chun
Meng
Yo-Sheng
Lin
page:
48
-
54
Multibit Resonant Tunneling Diode Sram Cell Based On Slew-Rate Addressing
(Article)
Subject:
Bistable Circuits
Author:
J. Paul A.
Wagt
H
Tang
Tom P. E.
Broekaert
page:
55
-
62
Rapid Thermal Anneal Of Gate Oxides For Low Thermal Budget Tft'S
(Article)
Subject:
Rapid Thermal
,
Gate Oxide
,
Budget
Author:
Navakanta
Bhat
Albert W.
Wang
Krishna C.
Saraswat
page:
63
-
69
Numerical Calculation Of Electromigration Under Pulse Current With Joule Heating
(Article)
Subject:
Electromigration
,
Interconnect
,
Reliability
Author:
Zhihong
Li
Yangyuan
Wang
Ying
Sun
page:
70
-
77
The Effects Of Extended Heat Treatmednt On Ni Induced Lateral Crystallization Of Amorphous Silicon Thin Fims
(Article)
Subject:
Lateral Crystallization
,
Nickel
,
Thin Film Transistors
Author:
Zhou
Jin
Hoi S.
Kwok
Man
Wong
page:
78
-
82
Intersubband Optical Absorption In Strained Double Barrier Quantum Well Infrared Photodetectors
(Article)
Subject:
Infrared Photodector
,
Optical Absorption
,
Strained Quantum Well
Author:
Jun-Jie
Shi
E. M.
Goldys
page:
83
-
88
An Analytical Model Of Magfet Sensitivity Including Secondary Effects Using A Continuous Description Of The Geometric Correction Factor G
(Article)
Subject:
Geometric Correction Factor
,
Magfet
,
Modeling
Author:
Hohannes W. A.
Von
Wrner A.
Langheinrich
page:
89
-
95
Hybrid Infrared Focal Plane Signal And Noise Model
(Article)
Subject:
Analog Implementation
,
Focal Plane Arrays
,
Infrared Detector
Author:
J.R
Johnson
page:
96
-
108
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