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Magazine Name : Ieee Transactions On Electron Devices

Year : 1999 Volume number : 46 Issue: 01

A Monolithically Integrated Three-Axis Accelerometer Using Cmos Compatible Stress-Sensitive Differential Amplifiers (Article)
Subject: Acceleration Measurement , Cmos Integrated Circuits , Differential Amplifiers
Author: H Takaori      Y Matsumoto      M Ishida     
page:      109 - 116
A Newleakage Mechanism Of Co Salicide And Optimzed Process Conditions (Article)
Subject: New Landfill Look , Optimized Control Method , Process
Author: Ken-Ichi Goto      Junji Watanabe      Takae Sukegawa     
page:      117 - 124
A New And Flexible Scheme For Hot-Electron Programming Of Nonvolatile Memory Cells (Article)
Subject: Current Absorption , Flash Eeprom , Hot Electron
Author: David Esseni      Paolo Cappelletti      Bruno Ricco     
page:      125 - 133
Observation Of"Capactiance Overshoot" In The Transient Currednt Measurement Of Polysilicon Tft'S (Article)
Subject: Capacitance Measurement , Current Measurement , Transient Analysis
Author: S. W. B. Tam      O. K. B. Lui      M. J. Quinn     
page:      134 - 144
Junction Leakage Characteristics In Modified Locos Isolation Structures With A Nitride Spacer (Article)
Subject: Mos Devices , Silicon Materials/Evices
Author: Se-Aug Jang      In-Seok Yeo      Young-Bog Kim     
page:      145 - 150
Substrate-Bias Effect And Source Drain Breakdown Characterisics In Body-Tied Short Channel Soi Modfet'S (Article)
Subject: Substrate , Effect , Source , Mosfets
Author: Shigenobu Maeda      Y Yamaguchi      Yasuo Iwamaguchi     
page:      151 - 158
A New Soft Breakdown Model For Thin Thermal Sio2 Films Under Constant Current Stress (Article)
Subject: Dielectric Breakdown , Gate Oxide , Mosfet
Author: T. Tomita      T Sakurai      Kenji Taniguchi     
page:      159 - 164
A Physical-Based Analytical Tun-On Model Of Polysilicon Thin-Film Transistors For Circuit Simulation (Article)
Subject: Kink-Effect , Turn On Model , Polysilicon Thin Film Transistors
Author: G Yang      Sungwoo Hur      Chul-Hi Han     
page:      165 - 172
A 63-170 Ghz Second-Harmonic Operation Of An Inp Transferred Electron Device (Article)
Subject: Inp Gunn Dioes , Second-Harmonic Oscillators , Transferred Electron Device
Author: Stephen H. Jones      Tim M. O'Brien      Michael F. Zybura     
page:      17 - 23
Nonlinear Device Noise Models Satisfying The Thermodynamic Requirements (Article)
Subject: Nonlinear , Noise Model , Requirment
Author: J. L Wyatt      G. J Coram     
page:      184 - 193
The Noise Of Inp Based 2degdevices And Its Dependence On Mobility (Article)
Subject: Devices , Dependence , Mobility
Author: Jurgen Berntgen      Klaus Heime      Franz-Losef Tegude     
page:      194 - 203
Constant-Resistance Deep-Level Transient Spectroscopy In Si And Ge Jfets'S (Article)
Subject: Constant - Pressure Test , Transient , Jfet
Author: Plamen V. Kolev      James Kierstead      Mauro Citterio     
page:      204 - 213
Surface-States Effects On Gaas Fet Electrical Performance (Article)
Subject: Charge Carrier Processes , Fet'S , Interface Phenomena , Semiconductors
Author: Y. Ohno      Prancis Francis      Masanobu Nogome     
page:      214 - 219
Field And Temperature Acceleration Model For Time-Dependent Dielectric Breakdown (Article)
Subject: Mos Capacitors , Oxide Breakdown , Oxide Gas
Author: Mikihiro Kimura     
page:      220 - 229
Analysis Of The Spurious Negative Resistance Of Pn Junction Avalanche Breakdown (Article)
Subject: Ionization , Silicon Devices , Simulation
Author: Sung Joon Hong      Young June Park      H Min     
page:      230 - 236
Oscillation Effects In Igbt''S Related To Negative Capacitance Phenomena (Article)
Subject: Insulated Gate Bipolar Transistors , Oscillation
Author: Ichiro Omura      Wolfgang Fichtner      F. Ohashi     
page:      237 - 244
Enhanacement Of High-Temperature High-Frequency Performance Of Gaas-Based Fet'S By The High-Temperature Electronic Technique (Article)
Subject: Fet'S , Hemts , High-Temperature Efects
Author: R Narasimhan      L. P. Sadwick      Ruey J. Hwu     
page:      24 - 31
2.5 Kv-1000 A Power Pack Igbt (High Power Flat-Packaged Npt Type Rc- Igbt) (Article)
Subject: Power Packaging , Flat-Plate
Author: Yoshikazu Takahashi      K. Yoshikawa      T. Fujii     
page:      245 - 250
A Modified Lucky Electron Model For Impact Ionization Rate In Nmosfet'S At 77 K (Article)
Subject: Impact Ionization , Low Temperature , Mosfets , Nonstationarity
Author: C. H. Ling      Lin Ming See     
page:      263 - 266
A Triple Channel Hemt On Inp (Camel Hemt) For Large-Signal High-Speed Applications (Article)
Subject: Triple Flame , Channel Flow , Application
Author: Jean Decobert      Hassan Maher      Aline Falcou      Andre Scavennec     
page:      32 - 37
Hgh- Performance Gaas Mesfet'S With Advanced Ldd Structure For Digital, Analog, And Microwave Applications (Article)
Subject: Gaas , High-Speed Integrated Circuits , Mesfet
Author: Shigeru Nakajima      Masaki Yanagisawa      Eiji Tsumura     
page:      38 - 47
The Effect Of Gate Recess Profile On Device Performance Of Ga Doped-Channel Fet'S (Article)
Subject: Breakdown Voltage , Doped-Channel Fet , Gate Resistance
Author: Shey-Shi Lu      Chin-Chun Meng      Yo-Sheng Lin     
page:      48 - 54
Multibit Resonant Tunneling Diode Sram Cell Based On Slew-Rate Addressing (Article)
Subject: Bistable Circuits
Author: J. Paul A. Wagt      H Tang      Tom P. E. Broekaert     
page:      55 - 62
Rapid Thermal Anneal Of Gate Oxides For Low Thermal Budget Tft'S (Article)
Subject: Rapid Thermal , Gate Oxide , Budget
Author: Navakanta Bhat      Albert W. Wang      Krishna C. Saraswat     
page:      63 - 69
Numerical Calculation Of Electromigration Under Pulse Current With Joule Heating (Article)
Subject: Electromigration , Interconnect , Reliability
Author: Zhihong Li      Yangyuan Wang      Ying Sun     
page:      70 - 77
The Effects Of Extended Heat Treatmednt On Ni Induced Lateral Crystallization Of Amorphous Silicon Thin Fims (Article)
Subject: Lateral Crystallization , Nickel , Thin Film Transistors
Author: Zhou Jin      Hoi S. Kwok      Man Wong     
page:      78 - 82
Intersubband Optical Absorption In Strained Double Barrier Quantum Well Infrared Photodetectors (Article)
Subject: Infrared Photodector , Optical Absorption , Strained Quantum Well
Author: Jun-Jie Shi      E. M. Goldys     
page:      83 - 88
An Analytical Model Of Magfet Sensitivity Including Secondary Effects Using A Continuous Description Of The Geometric Correction Factor G (Article)
Subject: Geometric Correction Factor , Magfet , Modeling
Author: Hohannes W. A. Von      Wrner A. Langheinrich     
page:      89 - 95
Hybrid Infrared Focal Plane Signal And Noise Model (Article)
Subject: Analog Implementation , Focal Plane Arrays , Infrared Detector
Author: J.R Johnson     
page:      96 - 108